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PRODUCT: ZEN132V130A24LS
PolyZen
308 Constitution Drive Menlo Park, CA 94025-1164 Phone: 800-227-4856 www.circuitprotection.com
Polymer Enhanced Zener Diode Micro-Assemblies Raychem Circuit Protection Products
DOCUMENT: SCD 26665 REV LETTER: D REV DATE: FEBRUARY 28, 2008 PAGE NO.: 1 OF 5
Specification Status: Released
GENERAL DESCRIPTION
Raychem PolyZen devices are polymer enhanced, precision Zener diode micro-assemblies. They offer resettable protection against multiWatt fault events without the need for multi-Watt heat sinking. The Zener diode used for voltage clamping in a PolyZen microassembly was selected due to its relatively flat voltage vs current response. This helps improve output voltage clamping, even when input voltage is high and diode currents are large. An advanced feature of the PolyZen micro-assembly is that the Zener diode is thermally coupled to a resistively non-linear, polymer PTC (positive temperature coefficient) layer. This PTC layer is fully integrated into the device, and is electrically in series between VIN and the diode clamped VOUT. This advanced PTC layer responds to either extended diode heating or overcurrent events by transitioning from a low to high resistance state, also known as "tripping". A tripped PTC will limit current and generate voltage drop. It helps to protect both the Zener diode and the follow on electronics and effectively increases the diode's power handling capability. The polymer enhanced Zener diode helps protect sensitive portable electronics from damage caused by inductive voltage spikes, voltage transients, incorrect power supplies and reverse bias. These devices are particularly suitable for portable electronics and other low-power DC devices
BENEFITS
* * * * * Stable Zener diode helps shield downstream electronics from overvoltage and reverse bias Trip events shut out overvoltage and reverse bias sources Analog nature of trip events minimizes upstream inductive spikes Minimal power dissipation requirements Single component placement
FEATURES
* * * * * * * Overvoltage transient suppression Stable VZ vs fault current Time delayed, overvoltage trip Time delayed, reverse bias trip Multi-Watt power handling capability Integrated device construction RoHS Compliant
TARGET APPLICATIONS
* * * * DC power port protection in portable electronics DC power port protection for systems using barrel jacks for power input Internal overvoltage & transient suppression DC output voltage regulation
TYPICAL APPLICATION BLOCK DIAGRAM
Power Supply
(External or Internal)
PolyZen Protected Electronics
2 VIN 1
GND
+
PolyZen Device
VOUT 3 Regulated
Output
RLoad
Protected downstream electronics
PRODUCT: ZEN132V130A24LS
PolyZen
308 Constitution Drive Menlo Park, CA 94025-1164 Phone: 800-227-4856 www.circuitprotection.com
Polymer Enhanced Zener Diode Micro-Assemblies Raychem Circuit Protection Products
DOCUMENT: SCD 26665 REV LETTER: D REV DATE: FEBRUARY 28, 2008 PAGE NO.: 2 OF 5
CONFIGURATION INFORMATION Pin Configuration (Top View) Recommended Pad Dimensions
2
GND
2.21 mm (0.087") 0.33 mm (0.013")
0.94 mm (0.037")
VIN
1 3
VOUT
0.56 mm (0.022") 2.88 mm (0.1135") 0.56 mm (0.022")
0.94 mm (0.037")
PIN DESCRIPTION
Pin Number 1 2 3 Pin Name VIN GND VOUT Pin Function VIN. Protected input to Zener diode. GND VOUT. Zener regulated voltage output
BLOCK DIAGRAM
Polymer PTC VIN Zener Diode VOUT
GND
DEFINITION of TERMS
IPTC IFLT IOUT Trip Event Current flowing through the PTC portion of the circuit RMS fault current flowing through the diode Current flowing out the VOUT pin of the device A condition where the PTC transitions to a high resistance state, thereby significantly limiting IPTC and related currents, and significantly increasing the voltage drop between VIN and VOUT. Time the PTC portion of the device remains both powered and in a tripped state.
IPTC VIN
IOUT
VOUT IFLT
Trip Endurance
GND
PRODUCT: ZEN132V130A24LS
PolyZen
308 Constitution Drive Menlo Park, CA 94025-1164 Phone: 800-227-4856 www.circuitprotection.com
Polymer Enhanced Zener Diode Micro-Assemblies Raychem Circuit Protection Products
DOCUMENT: SCD 26665 REV LETTER: D REV DATE: FEBRUARY 28, 2008 PAGE NO.: 3 OF 5
GENERAL SPECIFICATIONS
Operating Temperature Storage Temperature -40 to +85C -40 to +85C
ELECTRICAL CHARACTERISTICS1-3, 11 (Typical unless otherwise specified)
Part Number Min ZEN132V130A24LS
Note 1: Note 2:
VZ4 (V) Max 13.6
Izt4 (A)
IHOLD5 @ 20C (A) 1.3
R Typ6 (Ohms)
R1Max7 (Ohms)
VINT Max8 @ 2A (V) 24
IFLT Max9 (A) +2 / -40
Power Dissipation 10 (W) 0.7
13.2
0.1
0.12
0.16
Electrical characteristics determined at 25C unless otherwise specified. This device is intended for limited fault protection. Repeated trip events or extended trip endurance can degrade the device and may affect performance to specifications. Performance impact will depend on multiple factors including, but not limited to, voltage, trip current, trip duration, trip cycles, and circuit design. For details or ratings specific to your application contact Raychem Circuit Protection directly. Note 3: Specifications developed using 1.0 ounce 0.045" wide copper traces on dedicated FR4 test boards. Performance in your application may vary. Note 4: Izt is the current at which Vz is measured (VZ = VOUT). Additional VZ values are available on request. Note 5: IHOLD : Maximum steady state IPTC (current entering or exiting the VIN pin of the device) that will not generate a trip event at the specified temperature. Specification assumes IFLT (current flowing through the Zener diode) is sufficiently low so as to prevent the diode from acting as a heat source. Testing is conducted with an "open" Zener. Note 6: R Typ: Resistance between VIN and VOUT pins during normal operation at room temperature. Note 7: R1Max: The maximum resistance between VIN and VOUT pins at room temperature, one hour after 1st trip or after reflow soldering. Note 8: VINT Max: VINT Max is defined as the voltage at which typical qualification devices (98% devices, 95% confidence) survived at least 100 trip cycles and 24hours trip endurance at the specified voltage and current (IPTC). VINT Max testing is conducted using a "shorted" load (VOUT = 0V). VINT Max is a survivability rating, not a performance rating. For performance ratings, see Note 2. Note 9: IFLT Max: Maximum RMS fault current the diode portion of the device can withstand and remain resettable. Specification is dependent on the direction of current flow through the diode. RMS fault currents above IFLT Max may permanently damage the PolyZen device. Specification assumes IOUT = 0. Testing conducted at 24V and -16V, with no load connected to VOUT Note 10: The power dissipated by the device when in the "tripped" state. Note 11: Specifications based on limited qualification data and subject to change.
MECHANICAL DIMENSIONS
Length Width Height Length Diode Height Diode Offset Offset L W H Ld Hd O1 O2
Min 3.85 mm (0.152") 3.85 mm (0.152") 1.7mm (0.067") -
Typical 4 mm (0.16") 4 mm (0.16") 1.9 mm (0.075") 3.0 mm (0.118") 1.0 mm (0.039") 0.6 mm (0.024") 0.7 mm (0.028")
Max 4.15 mm (0.163") 4.15 mm (0.163") 2.1 mm (0.083") -
PRODUCT: ZEN132V130A24LS
PolyZen
308 Constitution Drive Menlo Park, CA 94025-1164 Phone: 800-227-4856 www.circuitprotection.com
Polymer Enhanced Zener Diode Micro-Assemblies Raychem Circuit Protection Products
DOCUMENT: SCD 26665 REV LETTER: D REV DATE: FEBRUARY 28, 2008 PAGE NO.: 4 OF 5
TYPICAL CHARACTERISTICS
Typical Fault Response: ZEN132V130A24LS 24V, 2.0A Current Limited Source (IOUT = 0) 30
Current: IFLT (A)
Pulse IV (300uSec Pulse)
10 5 0 -5
ZEN132V130A24LS
V (V) or I (A)
25 20 15 10 5 0 0.00
Vin (V) Vout (V) I FLT (A)
-10
0.10
0.20 0.30 Time (s)
0.40
0.50
-2
0
2
4 6 8 10 12 14 16 Voltage: VOUT (V)
VOUT Peak Vs IFLT RMS (IOUT = 0) 18
Time to Trip Vs IFLT RMS (IOUT = 0) 10 Time To Trip (Sec)
ZEN132V130A24LS
17 VOUT Peak (V) 16 15 14 13 12 0 1 2 IFLT RMS(A) 3 4
ZEN132V130A24LS
1 0.1 0.01 0 1 2 3 IFLT RMS (A) 4
VOUT Peak Vs IFLT RMS (IOUT = 0) 0 Time To Trip (Sec) -0.2 VOUT (V) -0.4 -0.6 -0.8 -1 -1.2 -50 -40 -30 -20 IFLT RMS(A) -10 0
ZENxxxV130A24LS
Time to Trip Vs IFLT RMS (IOUT = 0) 1
ZENxxxV130A24LS
0.1
0.01
0.001 -50 -40 -30 -20 IFLT RMS (A) -10 0
PRODUCT: ZEN132V130A24LS
PolyZen
308 Constitution Drive Menlo Park, CA 94025-1164 Phone: 800-227-4856 www.circuitprotection.com
Polymer Enhanced Zener Diode Micro-Assemblies Raychem Circuit Protection Products
DOCUMENT: SCD 26665 REV LETTER: D REV DATE: FEBRUARY 28, 2008 PAGE NO.: 5 OF 5
Temperature Effect on IHold (IFLT = 0)
2.5 2.0
Time to Trip Vs IPTC RMS (IFLT = 0) 10 Time To Trip (Sec)
ZENxxxV130A24LS
ZENxxxV130A24LS
1 0.1 0.01 0.001
IHold (A)
1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100
0
10
Ambient Temperature (C)
20 30 IPTC RMS (A)
40
Temperature Effect on RTyp
0.40 ZENxxxV130A24LS 0.30 0.20 0.10 0.00 20 40 60 80
RTyp (Ohms)
Ambient Temperature (C)
Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of each product for their applications. Tyco Electronics Corporation assumes no responsibility for the use of its product or for any infringement of patents or other rights of third parties resulting from the use of its product. No license is granted by implication or otherwise under any patent or proprietary right of Tyco Electronics except the right to use such product for the purpose for which it is sold. Tyco Electronics reserves the right to change or update, without notice, any information contained in this publication; to change, without notice, the design, construction, processing, or specification of any product; and to discontinue or limit production or distribution of any product. This publication supersedes and replaces all information previously supplied. Without expressed or written consent by an officer of Tyco Electronics, Tyco Electronics does not authorize the use of any of its products as components in nuclear facility applications, aerospace, or in critical life support devices or systems. Tyco Electronics' only obligations are those in the Tyco Electronics Standard Terms and Conditions of Sale and in no case will Tyco Electronics be liable for any incidental, indirect, or consequential damages arising from the sale, resale, use, or misuse of its products.
(c) 2008 Tyco Electronics Corporation. All rights reserved.

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